1 . 9 2. 80? 0. 05 1. 60? 0. 05 0 . 3 5 2 . 9 2 ? 0 . 0 5 0 . 9 5 ? 0 . 0 2 5 1 . 0 2 2SC1623 transistor (npn) features power dissipation p cm : 200 mw (tamb=25 ) collector current i cm : 100 ma collector-base voltage v (br)cbo : 60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics(tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 100 a, i e =0 60 v collector-emitter breakdown voltage v (br)ceo ic= 1 ma, i b =0 50 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb = 60 v, i e =0 0.1 a emitter cut-off current i ebo v eb = 5 v, i c =0 0.1 a dc current gain h fe(1) v ce = 6 v, i c = 1 ma 90 600 collector-emitter saturation voltage v ce(sat) i c = 100 ma, i b = 10 ma 0.3 v base-emitter saturation voltage v be(sat) i c = 100 ma, i b = 10 ma 1 v transition frequency f t v ce = 6 v, i c = 10 ma 250 mhz classification of h fe(1) rank l4 l5 l6 l7 range 90-180 135-270 200-400 300-600 marking l4 l5 l6 l7 sot-23-3l 1. base 2. emitter 3. collector 2SC1623 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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